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Optical and electrical properties of InAs/Ga(1-x)In(x)Sb photodiodes for infrared detection

Optische und elektrische Eigenschaften von InAs/(GaIn)Sb Photodioden zur Infrarot-Detektion
 

Shen, S.C.; Tang, D.Y.; Zheng, G.Z.; Bauer, G.:
Narrow gap semiconductors. Proceedings of the Eight International Conference on Narrow Gap Semiconductors 1997
Singapore: World Scientific, 1998
ISBN: 981-02-3344-2
pp.168-171
International Conference on Narrow Gap Semiconductors <8, 1997, Shanghai>
English
Conference Paper
Fraunhofer IAF ()
InAs/(GaIn)Sb Photodiode; infrared detector; Infrarot-Detektor

Abstract
We report on the fabrication and characterization of infrared photodiodes based on InAs/(GaIn)Sb superlattices grown on GaSb substrates. A series of devices employing a strain-optimized InAs/(GaIn)Sb superlattice were fabricated. The diodes show a responsivity of 2 A/W and a R0A product between 5 and 15 kohmcm3 at cut-off wavelengths between 7.5 and 8.5 mu m. Under forward bias electrically pumped emission is observed at wavelengths between 8 to 10 mu m up to 240 K.

: http://publica.fraunhofer.de/documents/PX-27294.html