On the electron capture kinetics of DX centers in AlxGa1-xAs-Si.

The measured temperature dependent free carrier concentration in AlsubxGasub1-xAs:Si samples with different doping concentrations is compared with model calculations where we take into account the full 35 times 4 alloy statistics of the DX center. The smooth onset of the carrier freeze out during heating up from the persistent photo conductivity state can be described only by potential fluctuation effects. We compare the full alloy statistics with the simple 4 times 1 statistics.