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1.3 mym monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs

1.3 mym monolithisch integrierter optoelektronischer Empfänger auf GaAs mit einer InGaAs-MSM-Photodiode und AlGaAs/GaAs HEMTs
 

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Electronics Letters 31 (1995), pp.67-68
ISSN: 0013-5194
English
Journal Article
Fraunhofer IAF ()
HEMT; InGaAs-MSM-Photodiode; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; optoelectronics; Optoelektronik; photodiodes

Abstract
The first 1.3 mym monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAS HEMTs grown on a GaAs substrate has been fabicated. At each differntial output the transimpedance is 26.8 komega. The bandwidth of 430 MHz implies suitability for transmission rates up to 622 Mbit/s.

: http://publica.fraunhofer.de/documents/PX-2705.html