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Observation of vacancy enhancement during rapid thermal annealing in nitrogen

Beobachtung der Erzeugung von Gitterleerstellen durch schnelle thermische Ausheilung in einer Stickstoffatmosphäre
 

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Diffusion and defect Data. B, Solid State Phenomena 57/58 (1997), pp.349-354
ISSN: 1012-0394
ISSN: 0377-6883
English
Journal Article
Fraunhofer IIS B ( IISB) ()
Gitterleerstelle; nitridation; Platindiffusion; Punktdefekt; silicium

Abstract
Nitridation of bare silicon surfaces in ammonia ambients is known to introduce vacancies into silicon. It is known that nitride films may form also during annealing in nitrogen ambients. Within the work presented here, the effects of such anneals on the redistribution of vacancies were investigated by low-temperature platinum diffusion. It will be shown that annealing in nitrogen ambients at temperatures of 1200 and 1250 deg C leads to an increase of the vacancy concentration with time.

: http://publica.fraunhofer.de/documents/PX-26921.html