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1994
Journal Article
Titel
Observation of local SIMOX layers by microprobe RBS
Abstract
Local SIMOX layers formed by oxygen implantation through an SiO2 mask were analyzed by microprobe RBS with 1.5 MeV helium ions. Lateral and cross-sectional images of Si and O atoms could be successfully obtained by an RBS mapping method. The O images suffered from more statistical fluctuation than the Si images in spite of higher total yields. The mapping images were used to find process-failure patterns of the local SIMOX layer.