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  4. A 0.25 mu m NMOS transistor fabricated with X-ray lithography
 
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1991
Journal Article
Title

A 0.25 mu m NMOS transistor fabricated with X-ray lithography

Abstract
Partially scaled 0.25 mu m NMOS transistors have been fabricated using X-ray lithography with synchrotron radiation (SRL). In this paper the present quality of this technique combined with the application of the X-ray sensitive resist RAY PF is discussed with special regard to pattern transfer and linewidth control. Fabrication process steps of the NMOS transistors are presented and electrical data of the devices are discussed.
Author(s)
Breithaupt, B.
David, H.H.
Ballhorn, R.
Jacobs, E.P.
Windbracke, W.
Zwicker, G.
Journal
Microelectronic engineering  
Conference
International Conference on Microlithography: Microcircuit Engineering (ME) 1990  
DOI
10.1016/0167-9317(91)90102-J
Language
English
Fraunhofer-Institut für Siliziumtechnologie ISIT  
Keyword(s)
  • masks

  • MOS integrated circuits

  • photoresists

  • synchrotron radiation

  • X-ray lithography

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