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A 0.25 mu m NMOS transistor fabricated with X-ray lithography

: Breithaupt, B.; David, H.H.; Ballhorn, R.; Jacobs, E.P.; Windbracke, W.; Zwicker, G.

	Microelectronic engineering 13 (1991), No.1-4, pp.319-322 ISSN: 0167-9317
	International Conference on Microlithography: Microcircuit Engineering (ME) <16, 1990, Leuven>

	English
	Conference Paper
	Fraunhofer ISIT ()
	masks; MOS integrated circuits; photoresists; synchrotron radiation; X-ray lithography

Abstract
Partially scaled 0.25 mu m NMOS transistors have been fabricated using X-ray lithography with synchrotron radiation (SRL). In this paper the present quality of this technique combined with the application of the X-ray sensitive resist RAY PF is discussed with special regard to pattern transfer and linewidth control. Fabrication process steps of the NMOS transistors are presented and electrical data of the devices are discussed.

: http://publica.fraunhofer.de/documents/PX-2691.html