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  4. Nucleation, relaxation and redistribution of Si layers in GaAs.
 
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1993
Journal Article
Title

Nucleation, relaxation and redistribution of Si layers in GaAs.

Other Title
Nukleation, Relaxation und Umverteilung von Si-Schichten in GaAs
Abstract
We study the structural properties of Si layers of different thickness (0.1-1.3 nm) inserted in GaAs by solidsource molecular beam epitaxy. Using high- resolution electron microscopy, we demonstrate that the Si nucleation on GaAs takes place via the formation of Si nanoclusters in a highly regular arrangement. Thicker films (several monolayers) are found to be partially intermixed with GaAs. This intermixing is caused by the segregation of a considerable fraction of the deposited Si during overgrowth, as observed by secondary ion mass spectrometry. Finally, we show that the strain relief of Si films on GaAs occurs at a thickness of about 1.2 nm via the generation of stacking faults, whereas complete dislocations are not detected.
Author(s)
Brandt, O.
Crook, G.
Ploog, K.
Bierwolf, R.
Hohenstein, M.
Maier, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Wagner, J.
Journal
Japanese Journal of applied physics. Part 2, Letters  
DOI
10.1143/JJAP.32.L24
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • GaAs

  • high-resolution electron microscopy

  • hochauflösende Transmissionselektronenmikroskopie

  • molecular beam epitaxy

  • Molekularstrahlepitaxie

  • secondary ion mass spectrometry

  • Sekundärionen-Massenspektroskopie

  • Si

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