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A novel pseudomorphic (GaAs1-xSbx-InyGa1-yAs)/GaAs bilayer-quantum-well structure lattice-matched to GaAs for long-wavelength optoelectronics

Eine neuartige (GaAs1-xSbx-InyGa1-yAs)/GaAs Bilayer Quantum Well Struktur gitterangepaßt auf GaAs für langwellige Optoelektronik
: Peter, M.; Forker, J.; Winkler, K.; Bachem, K.H.; Wagner, J.


Journal of Electronic Materials 24 (1995), No.11, pp.1551-1555
ISSN: 0361-5235
ISSN: 1543-186X
Journal Article
Fraunhofer IAF ()
chemical vapour deposition; GaAs; MOCVD; optoelectronics; Optoelektronik

Two types of quantum well (QW) structures grown lattice matched on (100) GaAs have been studied. The first type of structure consists of pseudomorphic GaAsxSb1-x/GaAs (x equal or smaller than 0.3) SQWs which show emission wavelengths longer than those reported for pseudomorphic InyGa1-yAs/GaAs QWs. However, the attractive emission wavelenght of 1.3 nanometre has not been achieved. To reach this goal, a novel type of bilayer QW (BQW) has been grown consisting of a stack of two adjacent pseudomorphic layers of GaAsxSb1-x and InyGa1-yAs embedded between GaAs confinement layers