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A novel delineation technique for 2D-profiling of dopants in crystalline silicon

 
: Gong, L.; Frey, L.; Bogen, S.; Ryssel, H.

:

Nuclear instruments and methods in physics research, Section A. Accelerators, spectrometers, detectors and associated equipment 74 (1993), pp.186-190
ISSN: 0167-5087
ISSN: 0168-9002
English
Journal Article
Fraunhofer IIS B ( IISB) ()
delineation; diffusion; distribution; dopant; ion implantation; silicon; simulation; technique

Abstract
An optimized delineation. technique was described.Using this technique, up to three equi-concentration lines can be made visible by one delineation process with high local resolution.The asymmetrical distribution of the concentration of implanted ions due to the 7 degree tilt during implantation and the mask edge effect due to the perpendicular side wall can be observed.By modifying the etching conditions equi-concentration lines covering more than four orders of magnitude of concentrations can be made visible.Parameters for two-dimensional simulation of implantation can be ex tracted.Combined with the FIB technique, this method is also suitable for the two-dimensional characterization of real devices, independent of the device structure.

: http://publica.fraunhofer.de/documents/PX-26565.html