Nondestructive topographic evaluation of ion implanted layers on GaAs substrates by optical absorption.

It is demonstrated that ion implanted layers can be analysed prior to annealing by measuring the sub-bandgap optical absorption of the damaged lattice. The absolute value and lateral homogeneity of the implantation dose can be measured. The method is fast, nondestructive and compares favorably with existing measurement techniques. (IAF)