Options
1995
Journal Article
Titel
Nitrogen implanted etch-stop layers in silicon
Abstract
The aim of this work is to investigate the possibility to produce an etch-stop layer in silicon through nitrogen ion implantation. The etching process is influenced by nitrogen concentrations in silicon above 1*120cm-3. Under the experimental conditions the observed step height between the implanted region and the unimplanted one did not exceed 1.8 mym.
Konferenz