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A new analytical and scaleable noise model for HFET

Ein neues analytisches und skalierbares Rauschmodell für Heterostruktur-Feldeffekttransistoren
: Reuter, R.; Tegude, F.J.


Meixner, R.; Cruz, J.J. ; Institute of Electrical and Electronics Engineers -IEEE-; IEEE Microwave Theory and Techniques Society:
IEEE MTT-S International Microwave Symposium Digest 1998. Vol.1
Piscataway, NJ: IEEE, 1998
ISBN: 0-7803-4471-5
pp.137-140 : Ill.
International Microwave Symposium <1998, Baltimore/Md.>
Conference Paper
Fraunhofer IAF ()
FET; HEMT; noise model; Rauschmodell

In this paper an analytical noise model for HFET, based on the physical interpretation of the bias dependence of the equivalent intrinsic noise sources, is presented. This model is bias-dependent and scaleable with the gate-geometry and allows the prediction of all noise parameters using two device dependent parameters in a wide bias range.