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1998
Conference Paper
Title

A new analytical and scaleable noise model for HFET

Other Title
Ein neues analytisches und skalierbares Rauschmodell für Heterostruktur-Feldeffekttransistoren
Abstract
In this paper an analytical noise model for HFET, based on the physical interpretation of the bias dependence of the equivalent intrinsic noise sources, is presented. This model is bias-dependent and scaleable with the gate-geometry and allows the prediction of all noise parameters using two device dependent parameters in a wide bias range.
Author(s)
Reuter, R.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Tegude, F.J.
Mainwork
IEEE MTT-S International Microwave Symposium Digest 1998. Vol.1  
Conference
International Microwave Symposium 1998  
DOI
10.1109/MWSYM.1998.689341
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • FET

  • HEMT

  • noise model

  • Rauschmodell

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