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Negative-U, off-center OAs in GaAs and its relation to the EL3 level

Negativ-U, off-center OAs in GaAs und seine Beziehung zum EL3 Niveau

: Klausmann, E.; Schneider, J.; Kaufmann, U.; Alt, H.C.

	Physical Review. B 43 (1991), No.14, pp.12106-12109 ISSN: 0163-1829 ISSN: 1098-0121 ISSN: 0556-2805

	English
	Journal Article
	Fraunhofer IAF ()
	EL3 level; EL3 Niveau; negative-U; oxygen; Sauerstoff; SI-GaAs

Abstract
Using comparative local-vibrational-mode and deep-level transient spectroscopy, we have studied the off-center O sub As defect in high-resistivity, undoped GaAs and neutron-transmutation-doped, n-type samples from the same starting material. The results fully support that this defect has a negative-U character. They also reveal that its deeper, two-electron level corresponds to the chemically unidentified EL 3 defect level in GaAs at E sub c -0.58 eV.