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Negative-U, off-center OAs in GaAs and its relation to the EL3 level
Negativ-U, off-center OAs in GaAs und seine Beziehung zum EL3 Niveau
|Physical Review. B 43 (1991), No.14, pp.12106-12109|
| Journal Article|
|Fraunhofer IAF ()|
| EL3 level; EL3 Niveau; negative-U; oxygen; Sauerstoff; SI-GaAs|
Using comparative local-vibrational-mode and deep-level transient spectroscopy, we have studied the off-center O sub As defect in high-resistivity, undoped GaAs and neutron-transmutation-doped, n-type samples from the same starting material. The results fully support that this defect has a negative-U character. They also reveal that its deeper, two-electron level corresponds to the chemically unidentified EL 3 defect level in GaAs at E sub c -0.58 eV.