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  4. Mushroom shaped gates defined by e-beam lithography down to 80 nm gate lengths and fabrication of pseudomorphic HEMTs with a dry-etched gate recess.
 
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1991
Conference Paper
Title

Mushroom shaped gates defined by e-beam lithography down to 80 nm gate lengths and fabrication of pseudomorphic HEMTs with a dry-etched gate recess.

Other Title
Elektronenstrahllithographie von pilzförmigen Gates bis 80 nm Gatelänge und Herstellung von pseudomorphen HEMTs mit trocken geätzter Gatevertiefung
Abstract
Sub 0.1 Mym mushroom shaped gates (T-gates) have been realized with a three layer resist technique using e- beam exposure. The exposure was carried out on a Philips EPBG-3 system operating at 50 kV. The resist system and writing strategy was investigated. Test exposures on SiN capped GaAs wafers with ohmic contacts having the same topography as active devices were carried out. Using this T-gate lithography pseudomorphic AlGaAs/InGaAs/GaAs HEMTs were fabricated. These devices have transit frequencies of 120 GHz.
Author(s)
Hülsmann, A.
Kaufel, G.
Raynor, B.
Schweizer, T.
Braunstein, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schlechtweg, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Tasker, P.
Jakobus, T.
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
Electron-beam, x-ray, and ion-beam submicrometer lithographies for manufacturing  
Conference
Electron-beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing Conference 1991  
Symposium on Microlithography 1991  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • e-beam lithography

  • Elektronenstrahllithographie

  • pseudomorphic HEMT

  • T-gate

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