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  4. Multigigahertz varactorless Si bipolar VCO IC.
 
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1992
Journal Article
Title

Multigigahertz varactorless Si bipolar VCO IC.

Other Title
Multigigahertz Si-Bipolar VCO IC ohne Varaktor
Abstract
A high-performance varactorless VCO is introduced, that uses a capacitively-coupled current amplifier as the active device. The test VCO IC realised in a 2 Mym Si bipolar process exhibits a maximum centre frequency of 2 *5GHz, a time jitter of 2 *5ps at 2 GHz, and temperature coefficient of less than 100 ppm/degree C.
Author(s)
Wang, Z.-G.
Journal
Electronics Letters  
DOI
10.1049/el:19920346
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • bipolar device

  • bipolares Bauelement

  • integrated circuit

  • integrierte Schaltung

  • oscillator

  • Oszillator

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