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Multigigahertz varactorless Si bipolar VCO IC.

Multigigahertz Si-Bipolar VCO IC ohne Varaktor

DOI: 10.1049/el:19920346

	Electronics Letters 28 (1992), No.6, pp.548-549 : Abb.,Lit. ISSN: 0013-5194

	English
	Journal Article
	Fraunhofer IAF ()
	bipolar device; bipolares Bauelement; integrated circuit; integrierte Schaltung; oscillator; Oszillator

Abstract
A high-performance varactorless VCO is introduced, that uses a capacitively-coupled current amplifier as the active device. The test VCO IC realised in a 2 Mym Si bipolar process exhibits a maximum centre frequency of 2 *5GHz, a time jitter of 2 *5ps at 2 GHz, and temperature coefficient of less than 100 ppm/degree C.

: http://publica.fraunhofer.de/documents/PX-25260.html