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1990
Journal Article
Titel
Multicomponent structure in the temperature-dependent persistent photoconductivity due to different DX centers in AlxGa1-xAs-Si.
Alternative
Multikomponenten-Struktur in der Temperaturabhängigkeit der persistenten Photoleitung aufgrund verschiedener DX-Zentren in AlxGa1-xAs-Si
Abstract
The persistent photoconductivity of Si-doped AlGaAs has been investigated by temperature-dependent resistance and Hall effect measurements. After illuminating the samples at low temperature, we observe for the first time distinct structures in the temperature-dependent carrier concentration during the subsequent heating process. These structures are interpreted in terms of the existence of different DX levels below the conduction-band edge.