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1997
Conference Paper
Titel
Multichannel process monitor for realtime film thickness and rate measurements in dry etching and deposition
Abstract
The versatile multichannel process monitor system MPM-X, designed for the online control of plasma and ion beam etching and deposition is introduced. It provides a number of important process data like in-situ etch rate and selectivity, deposition rate, film thickness, uniformity, and endpoints. This is achieved by an integration of optical emission spectroscopy OES and interferometry, where no external light source is required, but the plasma itself is used as a light source. According to the multichannel option of the MPM-X system a high degree of redundancy and hence accuracy in the determination of plasma and process data is gained. The process control capabilities of the MPM-X sy stem are demonstrated in this paper for various etch and deposition applications.