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Monolithic, high transimpedance gain (3.3 k ohm), 40 Gbit/s InP-HBT photoreceiver with differential outputs

Monolithischer 40 Gbit/s InP-HBT Photoempfänger mit hoher Transimpedanz (3,3 k Ohm) und differentiellen Ausgängen
 
: Huber, A.; Huber, D.; Morf, T.; Jäckel, H.; Bergamaschi, C.; Hurm, V.; Ludwig, M.; Schlechtweg, M.

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Electronics Letters 35 (1999), No.11, pp.897-898 : Ill.
ISSN: 0013-5194
English
Journal Article
Fraunhofer IAF ()
40 Gbit/s; OEIC; Photoempfänger; photoreceiver

Abstract
A monolithically integrated, lumped 4OGbit/s photoreceiver consisting of an InGaAs pin-photodetector, an InP/InGaAs SHBT transimpedance and a differential post-amplifier is presented. The complete circuit has an optical/electrical bandwidth of 28GHz. The open 40 Gbit/s eye diagrams demonstrate the successful highspeed operation of the photoreceiver. The transimpedance gain of the circuit was measured to be 3.3 k ohm (differential) which is the highest transimpedance yet reported for any.monolithically integrated 40 Gbit/s photoreceiver.

: http://publica.fraunhofer.de/documents/PX-24981.html