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  4. Modelling of illumination effects on resist profiles in X-ray lithography
 
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1991
Conference Paper
Title

Modelling of illumination effects on resist profiles in X-ray lithography

Abstract
Image intensity profiles and resist profile calculations using the XMAS simulation program are presented for storage ring X-ray lithography proximity printing under several illumination conditions. The calculations indicate the existence of a wide process window for the simultaneous replication of several kinds of subquarter-micron features.
Author(s)
Oertel, H.
Weiß, M.
Huber, H.-L.
Vladimirsky, Y.
Maldonado, J.R.
Mainwork
Electron-beam, x-ray, and ion-beam submicrometer lithographies for manufacturing  
Conference
Electron-beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing Conference 1991  
Symposium on Microlithography 1991  
Language
English
Fraunhofer-Institut für Siliziumtechnologie ISIT  
Keyword(s)
  • integrated circuit technology

  • photoresists

  • semiconductor technology

  • synchrotron radiation

  • X-ray lithography

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