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Modeling and simulation of particle incidence and charge collection in VLSI-dRAM-cells and other CMOS-structures. Detection and spectroscopy of particles

: Erlebach, A.; Streil, T.; Todt, U.

European Symposium on Semiconductor Detectors. Abstracts. New developments on radiation detectors
Milano, 1992
pp.49 : Abb.
European Symposium on Semiconductor Detectors <6, 1992, Milano>
Conference Paper
Fraunhofer IMS, Außenstelle Dresden ( IPMS) ()
Alpha-Strahlung; DRAM; Halbleiterdetektor; Simulationsprogramm; Strahlungsdetektor

This contribution is targeting on the simulation of the particle incidence in CMOS storage structures. The knowledge of these processes is necessary to determine the sensitivity of DRAM circuits with respect to radiation. Calculations based on a simple analytical formula for the generated electrons and holes are represented. The results are compared with values obtained by a analytical model and by experiments.