Options
1992
Conference Paper
Titel
Modeling and simulation of particle incidence and charge collection in VLSI-dRAM-cells and other CMOS-structures. Detection and spectroscopy of particles
Abstract
This contribution is targeting on the simulation of the particle incidence in CMOS storage structures. The knowledge of these processes is necessary to determine the sensitivity of DRAM circuits with respect to radiation. Calculations based on a simple analytical formula for the generated electrons and holes are represented. The results are compared with values obtained by a analytical model and by experiments.
Language
English