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Mixed signal integrated circuits based on GaAs HEMTs

Integrierte Mixed-Signal-Schaltkreise basierend auf GaAs HEMTs
 

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IEEE transactions on very large scale integration (VLSI) systems 6 (1998), No.1, pp.6-17
ISSN: 1063-8210
English
Journal Article
Fraunhofer IAF ()
Analog- und Digitalschaltkreis; analog and digital IC; GaAs circuit; GaAs-Schaltkries; microwave circuit; Mikrowellenschaltkreis; phase-locked loop; Phasenregelkreis

Abstract
During the past five years numerous mixed signal integrated circuits (IC's) have been designed, processed, and characterized based on our 0.2 mu m gate length AlGaAs/GaAs quantum well HEMT technology. Utilizing the inherent advantages of the AlGaAs/GaAs material system, optical, analog, microwave, and digital functions have been integrated monolithically. Examples are a chip set for 40 Gb/s optoelectronic data transmission systems, 15 and 34 GHz PLL's, a 35 GHz phase shifter for phased array antenna applications, a 2-kb ROM with subnanosecond access time for direct digital signal synthesis, and a 6-k gate array.

: http://publica.fraunhofer.de/documents/PX-24376.html