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Metrology and analytics for the optimization of CMP processing

 

Fourteenth International VLSI Multilevel Interconnection Conference 1997. Proceedings
Tampa, Fla.: VMIC Headquarters, 1997
pp.343-348
International VLSI Multilevel Interconnection Conference (VMIC) <14, 1997, Santa Clara/Calif.>
English
Conference Paper
Fraunhofer IIS B ( IISB) ()
in-line interferometry; post-CMP cleaning; spectral reflectometry; VPD-AAS analysis

Abstract
The combination of various polishing and machine parameters and their interaction with consumables (e.g. polishing pad, slurry) requires thickens measurements of chemical mechanically polished layers. Spectral reflectometry for thickness measurements of wafers immersed in water has been evaluated and optimized. This measurement technique permits thickness mapping of wafers for in-line applications after polishing and prior to the post-CMP clean. For establishing an efficient cleaning technology, VPD-AAS (vapor phase decomposition - atomic absorption spectrometry) measurements have been performed. The influence on the metallic contamination when adding different chemicals to the DI-water in the brush cleaner after polishing is discussed.

: http://publica.fraunhofer.de/documents/PX-23860.html