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1997
Journal Article
Titel
Metallization of polymers using plasma enhanced chemical vapor deposited titanium nitride as interlayer
Abstract
A low temperature process for titanium nitride (TiN) deposition by means of an electron cyclotron resonance (ECR) plasma CVD process was applied to poly(tetrafluoro-ethylene) (PTFE), polyimide (PI 2611), benzocyclobutene (BCB, CYCLOTENE 5021), and poly(butylene terephthalate) (PBT, Crastin S 600).The organometallic compounds tetrakis (dimethylamido) titanium (TDMAT) or titanium (IV)isopropoxide (TIP) introduced into the downstream region of a nitrogene ECR plasma were used as precursors for TiN deposition at 100øC. The thin TiN film (thickness 15-30 nm) act as a conductive layer for the electroplatingprocess or as adhesion promoter for sputtered titanium films. Prior to the deposition of the TiN interlayer, the samples, positioned on a biased substrate table, were exposed to an argon ECR plasma in order to enhance the adhesion of the TiN interlayer by Ar ion bombardment. This metallization procedure avoids the use of toxic and polluting etching agents for polymer activation as well as electroless metal deposition. The maximum adhesion of the electroplated copper on PTFE and PBT was established to be 13 N/mm² and 21 N/mm², respectively. For sputtered Ti films on PI and BCB maximum adhesion was 16 N/mm² and 21 N/mm²,respectively. As shown by atomic force microscopy (AFM), TiN grainswere formed on the polymer surface. Film composition was investigated by secondary ion mass spectrometry (SIMS).
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