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  4. Mechanisms for the modulation bandwidth enhancement in high-speed GaAs/AlGaAs and InGaAs/GaAs MQW lasers
 
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1993
Conference Paper
Title

Mechanisms for the modulation bandwidth enhancement in high-speed GaAs/AlGaAs and InGaAs/GaAs MQW lasers

Other Title
Ursachen für die Erhöhung der Modulationsbandbreite in GaAs/AlGaAs und InGaAs/GaAs-Hochgeschwindigkeits-MQW-Lasern
Abstract
A detailed comparison is presented between MBE-grown, vertically-compact, high-speed GaAs and strained Insub0.35Gasub0.65As ungraded separate-confinement double heterostructure MQW lasers designed for monolithic integration with MODFET driver circuits. The observed increase in differential gain is sufficient to account for the increased modulation bandwidths of the Insub0.35Gasub0.65As lasers. However, since the damping factor remains almost identical for both devices, the increase in differential gain appears to be offset by a corresponding increase in the nonlinear gain.
Author(s)
Ralston, J.D.
Weisser, S.
Esquivias, I.
Gallagher, D.F.G.
Larkins, E.C.
Rosenzweig, Josef  
Tasker, P.J.
Fleissner, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
Gallium arsenide and related compounds 1992. Proceedings  
Conference
International Symposium on Gallium Arsenide and Related Compounds 1992  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • high-speed optoelectronic

  • Hochgeschwindigkeitsoptoelektronik

  • monolithic integration

  • monolithische Integration

  • MQW-Laser

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