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Measurement of the exciton-formation time and the electron- and hole-tunneling times in a double-quantum-well structure

Messung der Exzitonenbildungszeit und der Elektronen- und Löcher-Tunnelzeiten in einer Doppelquantumstruktur
: Strobel, R.; Eccleston, R.; Kuhl, J.; Köhler, K.


Physical Review. B 43 (1991), No.15, pp.12564-12570 : Abb.,Lit.
ISSN: 0163-1829
ISSN: 1098-0121
ISSN: 0556-2805
Journal Article
Fraunhofer IAF ()
heterostructure; Heterostruktur; III-V Halbleiter; III-V semiconductors; quantum wells; timeresolved photoluminescence; zeitaufgelöste Photolumineszenz

The bimolecular nature of exciton formation from free carriers is demonstrated experimentally in a GaAs asymmetric double-quantum-well tunneling structure. A bimolecular formation coefficient of 6X10-12 cmhigh2/ps is obtained. The electron- and hole-tunneling times are determined simultaneously under the same sample conditions.