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Measurement of recombination and cell parameters in direct band gape -GaAs,InP- solar cells
In Si solar cells the evaluation of recombination and cell parameters of emitter and base is possible from spectral response in different spectral ranges. This is not so in direct bandgap solar cells. In GaAs and InP both regions of the cell contribute photocurrent in the same spectral range. Under consideration of the absorption coefficient and the actual range of geometrical parameters of these solar cells, the expressions for the photocurrent originating in the emitter, space charge region or base can be greatly simplified in certain spectral sub-ranges. The resulting expression allows the extraction of suface recombination velocity, junction depth and base diffusion length from spectral response measurements.