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1990
Conference Paper
Titel
Materials and device characteristics of single and double sided delta-doped pseudomorphic InxGa1-xAs/Al0.3Ga0.7As/GaAs high electron mobility transistors.
Alternative
Material und Bauelement Charakteristika von einseitig und doppelseitig delta-dotierten InxGa1-xAs/Al0.3Ga0.7As/GaAs HEMT-Strukturen
Author(s)