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Material and interface characterisation of buried silicon nitride for SOI-IC technology

Parallelausgabe: Publications 1985. IMS-Duisburg
 
: Belz, J.; Vogt, H.; Zimmer, G.; Kaat, E.H. te

ESSDERC '85. 15th European Solid State Device Research Conference. Proceedings
1985
European Solid State Device Research Conference <15, 1985, Aachen>
English
Conference Paper
Fraunhofer IMS ()

Abstract
Detailed electrical and physical properties of implanted buried silicon nitride are reported in this paper. The dependence of layers and interfaces on implantation and annealing conditions is shown, correlations between morphological and electrical data will be discussed. (IMS)

: http://publica.fraunhofer.de/documents/PX-22898.html