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1985
Conference Paper
Titel
Material and interface characterisation of buried silicon nitride for SOI-IC technology
Titel Supplements
Parallelausgabe: Publications 1985. IMS-Duisburg
Abstract
Detailed electrical and physical properties of implanted buried silicon nitride are reported in this paper. The dependence of layers and interfaces on implantation and annealing conditions is shown, correlations between morphological and electrical data will be discussed. (IMS)