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1985
Journal Article
Titel
Mass spectrometry for controlling etch process of silicon containing layers
Abstract
Mass spectrometry is used for studying etch processes of silicon, silicon oxide and silicon nitride. In addition to endpoint detection, the selectivity and homogeneity of the process are derived from the response of the SiF sub 3 ion current. The limitation of this method with respect to the area of monitoring as well as simultaneously etching of different materials is discussed.