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Lumped element 12 GHz LNA MMIC using InGaAs/GaAs MODFETs with optimised gate width and reactive feedback.

Rauscharmer integrierter 12 GHz Verstärker mit konzentrierten Elementen auf der Basis von InGaAs/GaAs MODFETs mit optimierter Gatebreite und reaktiver Gegenkopplung


Electronics Letters 29 (1993), No.15, pp.1394-1395 : Abb.
ISSN: 0013-5194
Journal Article
Fraunhofer IAF ()
amplifier; MMIC; MODFET; rauscharmer Verstärker; satellite link; Satellitenkommunikation

A two-stage 12 GHz LNA has been realised as a lumped element MMIC on GaAs substrates using Insub0.25Gasub0.75As channel PM-MODFETs. The gain is bigger than 17 dB and noise figure is smaller than 1.25 dB. Input (output) match is better than minus21 dB (minus 14 qB). The MMIC design includes reactive feedback by source inductances and makes use of optimised gate widths for broad noise circles and easy impedance match.