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LSI capability demonstration of an 0.15 mu m - 0.3 mu m GaAs HEMT and PM-HEMT 3 level metallization E/D-Technology for mixed signal circuits

LSI-Tauglichkeitsdemonstration einer 0.15 - 0.3 Mikrometer GaAs HEMT und PHEMT Technologie mit Dreilagenmetallisierung für Mixed-Signal-Schaltkreise
 

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IEEE Electron Devices Society; IEEE Microwave Theory and Techniques Society; IEEE Solid-State Circuits Society:
20th GaAs IC Symposium 1998. Technical digest
Piscataway, NJ: IEEE, 1998
ISBN: 0-7803-5049-9
pp.59-62
GaAs IC Symposium <20, 1998, Atlanta/Ga.>
English
Conference Paper
Fraunhofer IAF ()
frequency deviders; Frequenzteiler; gate array; LSI circuit; LSI-Schaltkreis; mixed signal IC; pseudomorphe HEMTs; pseudomorphic HEMT

Abstract
A 16 x 16 bit parallel multiplier based on a 26 k sea-of-gate has been fabricated successfully to demonstrate the LSI capability of our mixed signal IC technology including pseudomorphic T-gate HEMTs for high speed as. well as three levels of gold metallization for high integration complexity. To prove the high speed performance a digital dynamic frequency divider operating in a frequency band from about 36 GHz up to almost 60 GHz has been realised.

: http://publica.fraunhofer.de/documents/PX-22513.html