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Low energy implantation and transient enhanced diffusion

Physical mechanisms and technology implications
Niederenergieimplantation und transiente Diffusion: Physikalischer Mechanismuns und Auswirkung auf die Technologie
: Cowern, N.E.B.; Collart, E.J.H.; Politiek, J.; Bancken, P.H.L.; Berkum, J.G.M. van; Kyllesbech Larsen, K.; Stolk, P.A.; Huizing, H.G.A.; Pichler, P.; Burenkov, A.; Gravensteijn, D.J.

DeLaRubia, T.D. ; Materials Research Society -MRS-:
Defects and diffusion in silicon processing. Symposium 1997
Pittsburgh, Pa.: MRS, 1997 (Materials Research Society symposia proceedings 469)
ISBN: 1-55899-373-8
Symposium Defects and Diffusion in Silicon Processing <1997, San Francisco/Calif.>
Conference Paper
Fraunhofer IIS B ( IISB) ()
Bor; boron; ion implantation; Ionenimplantation; silicium; silicon; transient diffusion; transiente Diffusion

Low energy implantation is currently the most promising option for shallow junction formation in the next generations of silicon CMOS technology. Of the dopants that have to be implanted, boron is the most problematic because of its low stopping power (large penetration depth) and its tendency to undergo transient enhanced diffusion and clustering during thermal activation. This paper reports recent advances in our understanding of low energy B implants in crystalline silicon. In general, satisfactory source-drain junction depths and sheet resistances are achievable down to 0. 1 8 micron CMOS technology without the need for implantation of molecular species such as BF2.With the help of defect engineering it may be possible to reach smaller device dimensions. However, there are some major surprises in the physical mechanisms involved in implant profile formation, transient enhanced diffusion and electrical activation of these implants, which may influence further progress with this tech nology. Some initial attempts to understand and model these effects will be described.