• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Artikel
  4. Low dielectric constant materials for interlayer dielectric
 
  • Details
  • Full
Options
1998
Journal Article
Title

Low dielectric constant materials for interlayer dielectric

Abstract
The more advanced an integrated circuit becomes, the more stringent are the demands for certain properties of a dielectric or insulating material. In addition, it is essential that the layer maintain its specific electrical, physical and chemical properties after incorporation in the device structure and during subsequent processing. Due to temperature budget constraints and the accelerated decrease of feature sizes below 0.25 mu m one can no longer rely on traditional choices but has to search for alternatives, both for low and high permittivity replacements. In the article we survey currently used low dielectric constant materials and future trends for micro-electronic applications.
Author(s)
Treichel, H.
Ruhl, G.
Ansmann, P.
Wurl, R.
Müller, C.
Journal
Microelectronic engineering  
DOI
10.1016/S0167-9317(97)00185-8
Language
English
IFT  
Keyword(s)
  • dielectric thin films

  • integrated circuit metallisation

  • permittivity

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024