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  4. Low cost GaAs PHEMT MMICs for millimeter-wave sensor applications
 
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1998
Conference Paper
Title

Low cost GaAs PHEMT MMICs for millimeter-wave sensor applications

Other Title
Preiswerte auf GaAs basierende monolithisch integrierte Schaltungen für Millimeterwellensensoren
Abstract
A chip set for millimeter-wave sensor applications, especially automotive radar systems, is described. It consists of a highly integrated transceiver chip, a voltage controlled oscillator, a harmonic mixer and a medium power amplifier. The MMICs operate in the 76-77 GHz frequency range and have been fabricated by a production oriented GaAs PHEMT technology.
Author(s)
Siweris, H.J.
Werthof, A.
Tischer, H.
Schaper, U.
Schäfer, A.
Verweyen, L.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Grave, T.
Böck, G.
Schlechtweg, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kellner, W.
Mainwork
IEEE MTT-S International Microwave Symposium Digest 1998. Vol.1  
Conference
International Microwave Symposium 1998  
DOI
10.1109/MWSYM.1998.689362
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • automotive applications

  • coplanar transceive MMIC

  • Kfz-Abstandswarnradar

  • koplanarer Sende-Empfangs-Chip

  • oscillator

  • Oszillator

  • resistive HEMT mixer

  • resistiver HEMT-Mischer

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