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  4. Low-bias-current direct modulation up to 33 GHz in InGaAs/GaAs/AlGaAs pseudomorphic MQWRidge-waveguide lasers
 
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1994
Journal Article
Title

Low-bias-current direct modulation up to 33 GHz in InGaAs/GaAs/AlGaAs pseudomorphic MQWRidge-waveguide lasers

Other Title
33 GHz InGaAs/GaAs/AlGa pseudomorphischer MQW-Rippenwellenleiter-Laser mit kleinem Vorstrom
Abstract
Modulation bandwidths of 24 GHz (Ibias=25 mA) and 33 GHz (Ibias=65 mA) are demonstrated for 3*100 mym2 In0.35 Ga0.65 As/GaAs multiple quantum well ridge-waveguide lasers with undoped and p-doped active regions, respectively. These performance enhancements have been achieved both by lowering the growth temperature of the high-Al-mole-fraction cladding layers and by utilizing short-cavity devices, fabricated with dry-etched facts using chemically-assisted ion-beam etching. Both the undoped and p-doped lasers also demonstrate modulation current efficiency factors exeeding 5 GHz/mA 1/2, the best reported results for any semiconductor laser.
Author(s)
Ralston, J.D.
Weisser, S.
Eisele, K.
Sah, R.E.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Larkins, E.C.
Rosenzweig, Josef  
Fleissner, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Bender, K.
Journal
IEEE Photonics Technology Letters  
DOI
10.1109/68.324673
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • high-speed modulation

  • Hochgeschwindigkeitsmodulation

  • ion beam etching

  • Ionenstrahlätzung

  • MBE

  • quantum well lasers

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