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Low-bias-current direct modulation up to 33 GHz in InGaAs/GaAs/AlGaAs pseudomorphic MQWRidge-waveguide lasers

33 GHz InGaAs/GaAs/AlGa pseudomorphischer MQW-Rippenwellenleiter-Laser mit kleinem Vorstrom

: Ralston, J.D.; Weisser, S.; Eisele, K.; Sah, R.E.; Larkins, E.C.; Rosenzweig, J.; Fleissner, J.; Bender, K.

	IEEE Photonics Technology Letters 6 (1994), No.9, pp.1076-1079 : Abb., Lit ISSN: 1041-1135

	English
	Journal Article
	Fraunhofer IAF ()
	high-speed modulation; Hochgeschwindigkeitsmodulation; ion beam etching; Ionenstrahlätzung; MBE; quantum well lasers

Abstract
Modulation bandwidths of 24 GHz (Ibias=25 mA) and 33 GHz (Ibias=65 mA) are demonstrated for 3*100 mym2 In0.35 Ga0.65 As/GaAs multiple quantum well ridge-waveguide lasers with undoped and p-doped active regions, respectively. These performance enhancements have been achieved both by lowering the growth temperature of the high-Al-mole-fraction cladding layers and by utilizing short-cavity devices, fabricated with dry-etched facts using chemically-assisted ion-beam etching. Both the undoped and p-doped lasers also demonstrate modulation current efficiency factors exeeding 5 GHz/mA 1/2, the best reported results for any semiconductor laser.

: http://publica.fraunhofer.de/documents/PX-22436.html