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Local vibrational mode spectroscopy of Si donors and Be acceptors in MBE InAs and InSb studied by infrared absorption and Raman scattering.

Spektroskopie lokaler Schwingungsmoden von Si-Donatoren und Be-Akzeptoren in MBE InAs und InSb untersucht mit Infrarotabsorption und Ramanstreuung
: Addinall, R.; Murray, R.; Newman, R.C.; Parker, S.D.; Williams, R.L.; Droopad, R.; Deoliveira, A.G.; Stradling, R.A.; Wagner, J.


Semiconductor Science and Technology 9 (1991), No.6, pp.147-154 : Abb.,Tab.,Lit.
ISSN: 0268-1242
ISSN: 1361-6641
Journal Article
Fraunhofer IAF ()
InAs; InSb; IR-Absorption; local vibrational modes; lokale Schwingungsmode; raman scattering; Ramanstreuung

Samples of InAs and InSb either singly or doubly doped with Si and Be impurities have been studied using FTIR absorption spectroscopy and Raman scattering. Localized vibrational modes of high 28 Si sub in donors and high 9 Be sub in acceptors have been identified at 359 and 435 cm high -1 respectively in InAs. The two impurities give corresponding lines at 316 and 414 cm high -1 in InSb. Comparisons are made with the behaviour of the same impurities in compensated or p-type GaAs. Strong resonance effects relating to the incident photon energy are found in the Raman spectra of high 28 Si sub in donors.