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1998
Conference Paper
Titel
Lithographic process simulation for scanners
Abstract
In scanner systems wafer and reticle move continuously with respect to the projection optics. This movement across image field results in varying lateral shift and focus positions and in an averaging of aberrations from different positions of the projection system. Several approaches for the effective simulation of these effects are discussed. Based on simulated and experimental data, scanner effects are quantified and compared to results of static stepper exposure.
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