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Laser recrystallization of polysilicon for improved device quality

 
: Buchner, R.; Haberger, K.; Hu, B.

Polycrystalline Semiconductors
Berlin/West: Springer, 1989 (Springer Proceedings in Physics 35)
pp.289-294
English
Book Article
Fraunhofer IFT; 2000 dem IZM eingegliedert
3D-Integration; entrainment; grain boundary; Korngrenze; Kristallisation; laser; MOS; Polysilizium; SOI

Abstract
Thin polysilicon layers have been recrystallized using an argon laser scanning system. Integrated absorbers have been used in order to achieve an entrainment of the grain boundaries. MOS transistors have been fabricated in such recrystallized films and characterized through electrical measurements.

: http://publica.fraunhofer.de/documents/PX-21596.html