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Laser recrystallization of polysilicon for improved device quality

 
: Buchner, R.; Haberger, K.; Hu, B.

POLYSE '88
1988
POLYSE <1988>
English
Conference Paper
Fraunhofer IFT; 2000 dem IZM eingegliedert
3D-Integration; Laserkristallisation; MOS Transistor; Poly-Silizium; SOI

Abstract
Thin polysilicon layers have been recrystallized using an argon laser scanning system. Integrated absorbers has been used in order to achieve an entrainment of the grain boundaries. MOS transistors have been fabricated in such recrystallized films and characterized through electrical measurements. (IFT)

: http://publica.fraunhofer.de/documents/PX-21595.html