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Laser recrystallization for three-dimensional integration

: Buchner, R.; Haberger, K.; Seitz, S.; Weber, J.; Wel, W. van der; Seegebrecht, P.

	MIEL '89 1989
	MIEL <1989, Nis>

	English
	Conference Paper
	Fraunhofer IFT; 2000 dem IZM eingegliedert
	3D-Integration; entrainment; Kristallisation; laser; Polysilizium; SOI; substrate damage; Substratschaden

Abstract
Ar laser recrystallization of polycrystalline silicon-on-insulator layers for 3-dimensional integration is discussed. Attention is given to geometry and composition of anti-reflection stripes as well as to recrystallization conditions preventing substrate damage. Functioning devices both in the substrate and in the top layer have been fabricated.

: http://publica.fraunhofer.de/documents/PX-21594.html