: Buchner, R.; Haberger, K.; Seitz, S.; Weber, J.; Wel, W. van der; Seegebrecht, P.

Abstract
Ar laser recrystallization of polycrystalline silicon-on-insulator layers for 3-dimensional integration is discussed. Attention is given to geometry and composition of anti-reflection stripes as well as to recrystallization conditions preventing substrate damage. Functioning devices both in the substrate and in the top layer have been fabricated.