1989
Conference Paper
Title

Laser recrystallization for three-dimensional integration

Abstract
Ar laser recrystallization of polycrystalline silicon-on-insulator layers for 3-dimensional integration is discussed. Attention is given to geometry and composition of anti-reflection stripes as well as to recrystallization conditions preventing substrate damage. Functioning devices both in the substrate and in the top layer have been fabricated.
Author(s)
Buchner, R.
Haberger, K.
Seitz, S.
Weber, J.
Wel, W. van der
Seegebrecht, P.
Mainwork
Conference
Language
English
Keyword(s)