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K-band dielectric resonator oscillator using a GaInP/GaAs HBT

GaInP/GaAs-Heterobipolartransistoren für K-Band Oszillatoren mit dielektrischem Resonator
 

Rupprecht, H.S.; Weimann, G.:
Gallium arsenide and related compounds 1993. Proceedings
Bristol: IOP Publishing, 1994 (Institute of Physics - Conference Series 136)
ISBN: 0-7503-0295-X
pp.15-20
International Symposium on Gallium Arsenide and Related Compounds <20, 1993, Freiburg/Brsg.>
English
Conference Paper
Fraunhofer IAF ()
GaInP/GaAs; HBT; K-band oscillator; K-Band Oszillator

Abstract
Design, fabrication and performance of the first hybrid dielectric resonator oscillator (DRO) using a GaInP/GaAs HBT as active device are described. The oscillator consists of a microstrip circuit realized on aluminia substrate. The HBT has an emitter area of 1.5 mym x 20 mym and a selfaligned base contact. The vertical layer structure of the HBT incorporates a highly carbon doped base and a thin GaInP blocking layer. The fabricated oscillator exhibits an output power of plus 5 dBm at 21 GHz with a conversion efficiency of 13 percent. The phase noise has been measured to be minus 102.5 dBc/Hz at 100 kHz and minus 81.6 dBc/Hz at 10 kHz off carrier, respectively.

: http://publica.fraunhofer.de/documents/PX-20243.html