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A JFET-CMOS radiation-tolerant charge-sensitive preamplifier

 
: Buttler, W.; Hosticka, B.J.; Lutz, G.; Manfredi, P.F.

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IEEE journal of solid-state circuits 25 (1990), No.4, pp.1022-1024
ISSN: 0018-9200
English
Journal Article
Fraunhofer IMS ()
charge amplifier; CMOS; JFET; low-noise; radiation

Abstract
A monolithic charge-sensitive preamplifier based on n-channel junction field-effect transistors (JFET's) and p-channel MOS has been realized for applications with multielectrode detectors in elementary particle physics. Radiation resistance tests carried out with the preamplifier exposed to gamma-rays emitted by a 60Co source have shown no significant increase of the equivalent noise source up to 150-krd absorbed dose.

: http://publica.fraunhofer.de/documents/PX-20212.html