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Ion implantation models for process simulation. Chapter 2

 
: Ryssel, H.; Biersack, J.P.

Engl, W.L.:
Process and Device Modeling
Amsterdam, 1986
pp.31
German
Book Article
Fraunhofer IIS B ( IISB) ()

Abstract
Ion implantation is the most important doping technique for VLSI circuits. In this contribution, models describing implantation profiles in a manner suitable for process simulation, as well as methods of calculating range parameters, are described. In addition to simple cases of implantation into bare silicon, implantation through cap layers and at mask edges will also be considered and compared with Monte Carlo simulations.

: http://publica.fraunhofer.de/documents/PX-20072.html