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Ion implantation into non-planar targets - Monto Carlo simulations and analytical models

 
: Krueger, W.; Lorenz, J.; Ryssel, H.

Nuclear instruments and methods in physics research, Section B. Beam interactions with materials and atoms 19/20 (1987), pp.45-49
ISSN: 0168-583X
English
Journal Article
Fraunhofer IIS B ( IISB) ()

Abstract
Analytical calculations of two-dimensional implantation profiles taking into account the different stopping powers in mask and substrate are compared to Monte Carlo simulations. It is shown that a good descriptions can be obtained by analytic expressions. When the doping of vertical walls (e.g. in the case of deep trenches) is of importance, only Monte Carlo simulations lead to exact results. The lateral spread assumed to be depth independent in all analytical models shows slight differences to the Monte Carlo results.

: http://publica.fraunhofer.de/documents/PX-20070.html