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1989
Conference Paper
Titel
Ion-beam mixed MoSi2 layers - formation and contract properties
Alternative
Ionenstrahlgemischte MoSi2-Schichten - Bildung und Kontakteigenschaften
Abstract
Diodes with high conductivity Molybdenum-silicide-contacts were fabricated using self-aligned silicide technology and ion-beam mixing for silicidation. For optimizing contact properties, different ion-beam mixing processes were compared. The first mixing process investigated was a conventional one, using arsenic ions for silicide formation and doping of the underlying silicon substrate. After mixing, rapid thermal annealing was performed in a Nitrogen ambient to form stoichiometric silicide layers. The second ion-beam mixing process included a sequence of implantations: Silicon ions were used to cause mixing between the Mo-film and the underlying substrate. Rapid thermal annealing in Nitrogen ambient for silicidation was followed by a further silicon implantation to amorphize silicon substrate before junction doping by arsenic ion was performed. Electrical measurements were used to determine contact properties.