Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

An investigation of vacancy concentrations in bulk silicon

: Zimmermann, H.; Ryssel, H.

Ashok, S.; Chevallier, J.; Sumino, K. ; Materials Research Society -MRS-:
Defect engineering in semiconductor growth, processing and device technology
Pittsburgh, Pa.: MRS, 1992 (Materials Research Society symposia proceedings 262)
ISBN: 1-558-99157-3
Materials Research Society (Spring Meeting) <1992, San Francisco/Calif.>
Conference Paper
Fraunhofer IIS B ( IISB) ()
czrochalski; float zone; interstitial; precipitation; process modeling; semiconductor physics; silicon; vacancy

A method will be presented, which allows the quantitative determination of distributions of single vacancies in bulk silicon. The method uses deep level transient spectroscopy (DLTS) measurements of the platinum or gold concentration after diffusion at a low temperature. An analytical expression allows the calculation of the vacancy concentration from the measured platinum or gold concentration. Vacancy concentrations vary at least from 2.0highx10high12 to 2.2highx10high14 cmhighminus3 in float zone silicon. The vacancy concentrations in Czrochalski (CZ) silicon are in the range of 4highx10high12 to 2highx10high13 cmhighminus3. Microwave photoconductive decay instead of DLTS allows much faster measurements of vacancy distributions on whole wafers. Furthermore, both methods allow the investigation of oxygen precipitation in CZ silicon.