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Investigation of DX centers in AlxGa1-xAs by space charge spectroscopy.

Untersuchung von DX-Zentren in AlxGa1-xAs mittels Raumladungsspektroskopie
: Wöckinger, J.; Jantsch, W.; Wilamowski, Z.; Köhler, K.


Journal of applied physics 74 (1993), No.2, pp.1051-1056 : Abb.,Lit.
ISSN: 0021-8979
ISSN: 1089-7550
Journal Article
Fraunhofer IAF ()
DX center; DX-Zentrum; electrical property; elektrische Eigenschaft; III-V Halbleiter; III-V semiconductors

We present a critical analysis of both deep level transient spectroscopy and transient microwave absorption spectroscopy (MAS) for the case of DX centers in AlGaAs. We show that, even for a single level, a strongly nonexponential time dependence of the transients occurs. Our MAS experiments on Si-DX centers in Al0.3Ga0.7As extend the available data for the emission rates by more than three orders of magnitude. They are successfully interpreted by a single emission time constant using our model whereas at least three decay time constants are needed to explain the data by a pure exponential. Observed recapture processes in the neutral region of the sample underline the complexity of space charge spectroscopy in the case of the DX center.