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  4. Investigation of degraded laser diodes by chemical preparation and luminescence microscopy
 
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1998
Conference Paper
Title

Investigation of degraded laser diodes by chemical preparation and luminescence microscopy

Other Title
Untersuchung degradierter Laserdioden durch chemische Präparation und Lumineszenz-Mikroskopie
Abstract
The gradual degradation of 808 nm InGaAlAs/AlGaAs and 940 nm InGaAs/AlGaAs high power laser diodes has been investigated by plane view photoluminescence microscopy of the active layer. 940 nm lasers degraded by long-term operation revealed broad dark bands. The defect pattern of intentionally overheated devices shows dark spots and lines for both laser systems.
Author(s)
Baeumler, Martina  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Weyher, J.L.
Müller, Stefan
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Jantz, W.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Stibal, R.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Herrmann, G.
Luft, J.
Sporrer, K.
Späth, W.
Mainwork
Defect recognition and image processing in semiconductors 1997. Proceedings  
Conference
International Conference on Defect Recognition and Image Processing in Semiconductors (DRIP) 1997  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • InGaAs/AlGaAs laser

  • photoluminescence microscopy

  • Photolumineszenz-Mikroskopie

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