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Intersubband transitions in InAs/AlSb quantum wells studied by resonant Raman scattering

Untersuchung von Intersubban-Übergängen in InAs/AlSb Quantum Wells mittels Ramanstreuung


Physical Review. B 51 (1995), No.15, pp.9786-9790
ISSN: 0163-1829
ISSN: 1098-0121
ISSN: 0556-2805
Journal Article
Fraunhofer IAF ()
InAs/AlSb quantum well; intersubband transition; Intersubband-Übergang; raman scattering; Ramanstreuung

We have used resonant Raman scattering to study intersubband transitions InAs/AlSb quantum wells. For optical excition in resonance with E1 band gap of InAs, both high- and low-frequency coupled longitudinal-optical phonon-intersubband plasmon modes are observed. From the measured energies of these plasmon modes the single-particle transition energies between the first and second confined electron subband were deduced as a function of the InAs well width. Good agreement was found with subband spacings predicted by theory including the effects of strain and nonparabolicity. InAs/AlSb surface quantum wells, where a pseudomorphically strained InAs quantum well is grown on an AlSb buffer layer without an AlSb top barrier, also show well-resolved intersubband plasmon modes, indicating higher-electron mobilities than those typically found in the surface inversion region of thick InAs layers.