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1998
Conference Paper
Titel
The interface of silicon samples joined at room temperature by wafer direct bonding in ultrahigh vacuum
Abstract
The bonding of solids with atomically clean surfaces represents a low-temperature wafer direct bonding technique with potential applications electronics and micromechanics. Upon contact at room temperature, silicon surfaces cleaned in ultra-high vacuum spontaneously adhered to each other. (100), (110) and (111) oriented wafers were bonded. The strength of adhesion was tested mechanically, yiedling surface energies in exess of 2Jm(-2). Whether covalent bonding could be observed or not decisively investigated with plan-view and cross-sectional transmission electron microscopy; two cases could be distinguished.